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White Papers > Materials and Gases

Optimizing the selection and supply of hf precursor candidates for gate oxide

01 August 2005 | Edition 27, Materials and Gases
A. Soulet, L. Duquesne, G. Jursich & R. Inman, American Air Liquide, Chicago research Center, IL, USA,
A. Misra, Air Liquide Electronics U.S. LP, Dallas, TX, USA, N. Blasco, C. Lachaud, Y. Marot, R. Prunier &
M. Vautier, Air Liquide Centre de Recherches Claude Delorme, Jouy-en-Josas, France, & S. Anderson,
P. Clancy & M. Havlicek, Air Liquide – Balazs™ Analytical Services, CA, USA Read more >>

Materials development in volume semiconductor fabrication

01 August 2005 | Edition 27, Materials and Gases
Bill Reith, Senior Supplier Quality Engineer, Freescale Semiconductor, Scotland Read more >>

Manufacturable strained silicon technology

01 August 2005 | Edition 27, Materials and Gases
P.R. Chidambaram, Texas Instruments, Richardson, TX, USA Read more >>

Gate spacer engineering for improved boron dose retention

01 August 2005 | Edition 27, Materials and Gases
John Gumpher, Tokyo Electron America, Austin, TX, USA, Narendra Mehta & Wayne Bather, Texas Instruments, Dallas, TX, USA Read more >>

Production processes for inducing strain in CMOS channels

01 June 2005 | Edition 26, Materials and Gases
Amir Al-Bayati, Lori Washington, Li-Qun Xia, Mihaela Balseanu, Zheng Yuan, Mark Kawaguchi, Faran Nouri & Reza Arghavani, Applied Materials, Inc., USA Read more >>

Channel substrate engineering for the 65nm CMOS technology node and beyond

01 June 2005 | Edition 26, Materials and Gases
V. Vartanian, B-Y Nguyen, A. Thean, D. Zhang, S. Zollner, T. White, M. Sadaka, B. Goolsby,
V. Dhandapani, J. Hildreth, L. McCormick, D. Theodore, Q. Xie, X-D Wang, M. Canonico,
M. Kottke, Z. Shi, L. Mathew, M. Zavala, C. Parker, H. Collard, L. Prabhu, R. Rai, S. Murphy,
P. Montgomery, S. Kalpat, M. Ramon, V. Adams, J. Jiang, J. Chen, V. Kaushik, M. Sadd, A. Barr,
A. Vandooren, D. Pham, V. Kolagunta, M. Orlowski, N. Ramani, S. Vanketesan & J. Mogab,
Freescale Semiconductor, Inc., Advanced Products Research and Development Laboratory, Austin, Texas, USA Read more >>

Metal-gate integration challenges

01 March 2005 | Edition 25, Materials and Gases
Kirklen Henson & Malgorzata Jurczak, IMEC, Leuven, Belgium Read more >>

Suppression of boron diffusion in Si and SiGe devices by fluorine implantation

01 December 2004 | Edition 24, Materials and Gases
Professor Peter Ashburn, Director & Technical Advisor, Innos, Southampton, UK Read more >>

X-ray metrology for front-end applications

01 December 2004 | Edition 24, Materials and Gases
D.E. Joyce & P.A. Ryan, Bede, Durham, UK, & M.Wormington, Bede, Englewood, CO, USA Read more >>

Materials and processes for high-k gate stacks

01 June 2004 | Edition 22, Materials and Gases
C.M. Osburn, A. Kingon, G. Lucovsky, J.P. Maria, V. Misra & G. Parsons, North Carolina State University, USA, S.A. Campbell, University of Minnesota,USA, E. Eisenbraun, University of Albany, USA, E. Garfunkel & T. Gustafson, Rutgers University, USA, D. L. Kwong & J. Lee, University of Texas at Austin, USA, T.P. Ma,Yale University, USA, D. Schlom, Penn State University, USA, & S. Stemmer,UC Santa Barbara, USA Read more >>