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Edition 38: The holistic route to high yields at smallest feature sizes

08 January 2009 | Edition 38, Lithography

FT38By Bernardo Kastrup, ASML, Veldhoven, The Netherlands - ABSTRACT - Feature shrink is the force that drives the semiconductor industry forward. At each step along the technology roadmap, manufacturers need to be able to produce chips efficiently, cost effectively and with high yield. As feature sizes become ever smaller, the manufacturing challenges increase almost exponentially, putting extremely tight requirements on parameters such as overlay and critical dimension uniformity (CDU). Even the tiniest process variation can have a potentially disastrous effect. In order to remedy these challenges, this paper’s proposal for a holistic manufacturing approach claims to avoid these effects by looking at all of the essential steps and processes together as a whole.

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Sources of overlay error in double patterning integration schemes

01 March 2008 | Edition 37, Lithography
David Laidler, Philippe Leray, Koen D’Havé & Shaunee Cheng, IMEC, Leuven, Belgium Read more >>

193nm reticle haze: the dirty little secret and its ultimate solution?

Oleg Kishkovich, Anatoly Grayfer & Frank V. Belanger, Entegris, Inc., Franklin, MA, USA Read more >>

Prospects of incorporating directed self-assembly into semiconductor manufacturing

01 December 2007 | Edition 36, Lithography
R. Singh, T. Boland, R. Mulye, G. Gaur, J.Steelman, D. Arya, N. Srinidhi and P.Deshmukh, Holcombe Department of Electrical and Computer Engineering and Center for Silicon Nanoelectronics, Clemson University, South Carolina, USA Read more >>

Developing micro ADI methodology for new litho process monitoring strategies

01 December 2007 | Edition 36, Lithography
KLA-Tencor and Qimonda Read more >>

Defect metrology in water immersion ArF lithography

01 September 2007 | Edition 35, Lithography
Uzodinma Okoroanyanwu, AMD, USA; Remo Kirsch & Marcel Grundkowski, AMD Fab 36, Germany; Rene Wirtz & Wolfram Grundke, AMD Saxony LLC, Germany Read more >>

Tuned Reticle Enhancements Optimized for Process Response

01 April 2007 | Edition 33, Lithography
Terrence E. Zavecz, TEA Systems
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Overlay control requirements for next-generation lithography

01 April 2007 | Edition 33, Lithography
By Eitan Herzel and Mike Adel, KLA-Tencor Corporation Read more >>

Lithography cell productivity improvement approaches

01 December 2006 | Edition 32, Lithography
Stefan Hempel, Steffen Volt, & Wolfram Grundke, AMD, Dresden, Germany Read more >>

Fabless/Foundry DFM: 45nm and beyond

01 December 2006 | Edition 32, Lithography
Peter Rabkin, Michael Hart & Daniel Gitlin, Xilinx, Inc., San Jose, California Read more >>