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White Papers > Edition 20

Some viewpoint of particles concentration control in 300-mm DRAM cleanroom fab design

01 December 2003 | Edition 20, Cleanroom
Andy Yang, ProMOS Technologies Inc. Hsinchu, Taiwan, R.O.C.
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Contamination-free liquid-flow controller

01 December 2003 | Edition 20, Critical Components
Dave Wehrs & Chuck Gould, NT International & Huaping Wang, Entegris, Inc. Read more >>

Ramping up to DFM: design for manufacture

01 December 2003 | Edition 20, Fab Management
John Ferguson, Mentor Graphics, OR, USA Read more >>

Equipment Lifecycle Management

01 December 2003 | Edition 20, Fab Management
Trey Brown, GE Global Electronics Solutions Read more >>

Immersion lithography heads for the rapids

01 December 2003 | Edition 20, Lithography
Mark Osborne, Editor-in-Chief, Semiconductor Fabtech Read more >>

65-nm dry etch: the photomask future has arrived

01 December 2003 | Edition 20, Lithography
Michael D. Archuletta, Chris Constantine & Dave Johnson, Unaxis Semiconductors, Florida, USA
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Bilayer resist method for dual damascene processes and advanced devices

01 December 2003 | Edition 20, Materials and Gases
Peter Cirigliano, Reza Sadjadi, & Amulya Athayde, Lam Research Corp., Fremont, CA, USA, George Barclay, Jerome Wandell, & Frank Fischer, Shipley Company, LLC, Marlborough, MA, USA Read more >>

The changing role of copper in IC manufacturing

01 December 2003 | Edition 20, Wafer Processing
Ken Monnig, International SEMATECH, Austin, TX, USA Read more >>

The application of plasma for metal atomic layer deposition (ALD) for Cu interconnect technology

01 December 2003 | Edition 20, Wafer Processing
Stephen M. Rossnagel & Hyungjun Kim, IBM, USA Read more >>

Taking control of the copper process at 65 nmTaking control of the copper process at 65 nm

01 December 2003 | Edition 20, Wafer Processing
Murali Narasimhan, Films and Surface Technology Division, KLA-Tencor Corporation, USA Read more >>