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White Papers > Edition 15

Realise Drastic Productivity Improvements Through the IBM UBG1 ‘PRO/Teams’ Methodology

01 December 2002 | Edition 15, Fab Management
HARALD KLENK, IBM Unternehmensberatung GmbH, Herrenberg, Germany Read more >>

Fab Layout for 300mm Mass-Production Lines

01 December 2002 | Edition 15, Fab Management
KWON-SU PARK, SEOK-HEE PARK & SEUNG-HOON AHN, Samsung Semiconductors, Kyunggi-Do, Korea Read more >>

Enterprise-wide 300mm Integration

01 December 2002 | Edition 15, Fab Management

Enterprise-wide 300mm Integration; Pervasive Planning and AMHS are Crucial to Profitability in Next-generation Fab

RICHARD WANG, SHELBY LAURENTS & CHARLES LYNN, Fluor Microelectronics

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A New Approach for Scheduling Semiconductor Wafer Fabs

01 December 2002 | Edition 15, Fab Management
JOHN W. FOWLER, W. MATTHEW CARLYLE, GEORGE C. RUNGER & ESMA S. GEL, Arizona State University, USA
SCOTT J. MASON, University of Arkansas, Fayetteville, AR, USA
OLIVER ROSE, University of Würzburg, Germany Read more >>

Insulate Your Plant From VOC Abatement Risk and Lower Your Costs Through Outsourcing

01 December 2002 | Edition 15
STEPHEN W. BLOCKI, Dürr Environmental Inc, Wixom, MI, USA Read more >>

EHS Analysis of Advanced CVD Processes

01 December 2002 | Edition 15
LAURA MENDICINO, VICTOR VARTANIAN, BRIAN GOOLSBY & PAUL THOMAS BROWN,
Motorola, DigitalDNA™ Laboratories, Austin, TX, USA Read more >>

Balancing Power and Fuel Usage of PFC Abatement Options for Minimisation of Etch Tool Global Warming

01 December 2002 | Edition 15

Balancing Power and Fuel Usage of PFC Abatement Options for Minimisation of Etch Tool Global Warming Footprint

ERIC J. TONNIS, Litmas Inc., Charlotte, NC, USA

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Turning Crystal Growth on Its Side: A Revolutionary New Crystal Technique for Next-Generation Photol

01 December 2002 | Edition 15, Lithography

Turning Crystal Growth on Its Side: A Revolutionary New Crystal Technique for Next-Generation Photolithography Lens Materials

KIRIL A. PANDELISEV, Single Crystal Technologies, Gilbert, AZ, USA 

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Intrinsic Birefringence in Crystalline Optical Materials for 193 nm and 157 nm Lithography

01 December 2002 | Edition 15, Lithography
JOHN H. BURNETT, ZACHARY H. LEVINE & ERIC L. SHIRLEY, National Institute of Standards and Technology, Gaithersburg, MD, USA Read more >>

CARL – Benefits of an Advanced Shrink Technology for Thin Film Imaging

01 December 2002 | Edition 15, Lithography
ERNST RICHTER, MICHAEL SEBALD, LINDA CHEN, GÜNTER SCHMID & GÜNTHER CZECH, Infineon Technologies AG, Erlangen, Germany Read more >>