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Using polymer deposition to control contact hole distortion at ≤65nm
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Judy Wang, Shing-Li Sung & Shawming Ma, Applied Materials, USA
ABSTRACT
Contact-hole distortion results from low mask selectivity and poor mask surface quality (roughness, striation, pitting, or pin holes) before and after etching. Thinner, softer ArF resists are particularly susceptible to these defects, giving rise to the need for additional steps in the etch sequence to mitigate pattern deformation.
Experimentation with a polymer deposition process shows that by adding this step before, after, or before and after the bottom anti-reflective coat (BARC) open step, mask quality is much improved and contact profiles can be well controlled.
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