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Thermally Driven Recrystallisation of Electroplated Copper
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DAVE CLARKE, STEAG RTP Systems, San Jose, CA, USA
RANDHIR THAKUR, STEAG Electronic Systems, San Jose, CA, USA
ABSTRACT
Electrochemically deposited (ECD) copper films are studied for response to room temperature selfannealing and rapid thermal annealing (RTA) in a tungsten-halogen lamp based, rapid thermal processor. It is demonstrated that 1.3μm thick copper films with 0.25μm single damascene trench lines can be driven to recrystallise at a process temperature of 250ºC and time of 30 seconds as evidenced by post anneal grain growth. However, room temperature annealed (selfannealed) 0.25μm trenches did not fully recrystallise after one week although 0.75μm trenches and the bulk film has recrystallised.
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