Online information source for semiconductor professionals

Taking control of the copper process at 65 nmTaking control of the copper process at 65 nm

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

Murali Narasimhan, Films and Surface Technology Division, KLA-Tencor Corporation, USA

ABSTRACT

The move from aluminum to copper (Cu) interconnects has been driven primarily by the desire for better device performance. However, the transition to Cu created a number of unexpected challenges that slowed the rate of Cu adoption at the 130- nm node and stalled efforts to integrate low-k dielectrics into the interconnect. With several IC manufacturers now completing the development cycle for their second-generation Cu interconnects for the 90-nm node, process development engineers are now beginning to look at process issues that they are likely to face at 65 nm. What they will find are not incrementally more difficult process integration problems, but rather an entirely new set of challenges that will require the implementation of very specific metrology techniques to keep copper interconnect processing under control. Cu process control issues at the 65-nm node can be broadly classified into five categories: (1) low-k materials; (2) Cu barrier/seed advances; (3) electroplating; (4) Cu chemical mechanical planarization (CMP); and (5) interconnect reliability. This article explores each of these issues in detail and describes the best-known metrology methods currently available to help IC manufacturers bring the copper process under control at the 65-nm node.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Real-time profile control: advanced process control for copper CMP - 01 June 2004

Tool Order: Nova‚??s integrated metrology systems now used by two flash memory manufacturers - 07 July 2009

Tool Order: Nova wins multiple copper metrology order from a foundry - 30 March 2009

Advanced process control of copper electroplating thickness profile - 01 March 2008

Copper CMP treatment using the Copper Select‚?Ę process - 01 March 2005

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: