Online information source for semiconductor professionals

Suppression of boron diffusion in Si and SiGe devices by fluorine implantation

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

Professor Peter Ashburn, Director & Technical Advisor, Innos, Southampton, UK

ABSTRACT

Boron diffuses relatively quickly in silicon at temperatures typically used for anneals in CMOS and bipolar technologies making it hard to precisely control the location of the doping profiles and very difficult to form very shallow boron-doped junctions. This problem is much worse when anneals are carried out after ion implantation because of transient enhanced diffusion, which is caused by damage introduced during ion implantation, and arises because dopants diffuse with the aid of point defects, interstitials in the case of boron. Transient enhanced diffusion can enhance the diffusion coefficient of boron by as much as an order of magnitude during the short anneals typically used in rapid thermal annealing.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Gate spacer engineering for improved boron dose retention - 01 August 2005

Linde’s new dopant gas range lowers ion implantation costs by 20% - 05 February 2010

Tokyo Electron to use on-site fluorine generator from Linde for Nirasaki R&D facility - 17 March 2011

The SiGe:C Epitaxy Process - 01 June 2001

Innovations in Silicon Germanium Bicmos Processing - 01 June 2000

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: