Online information source for semiconductor professionals

Study of Ni-silicide contacts to Si:C source/drain

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Y. Chob, F. Nourib, R. Schreutelkamp & Y. Kim, Applied Materials Inc., CA, USA, &
S. Mertens, P. Verheyen, J. Steenbergen, C. Vrancken, O. Richard, Z. Tökei, A. Lauwers, H. Bender, B. Van Daele, W. Vandervorst, L. Geenen, P. Absil, S. Kubicek & C. Demeurisse, IMEC, Leuven, Belgium

Abstract

Integration of recessed Si:C source/drain (S/D) for deep sub-micron nMOSFET devices results in substantial improvement of electron mobility and drive current due to introduction of tensile strain in the channel. The compatibility of Ni-silicide contacts with Si:C source/drain is investigated in this paper. The Ni-silicide morphology and phase formation were studied by means of sheet resistance measurements, X-Ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS) analysis, and Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) inspection. The carbon concentration and profile in the NiSi:C film was studied by Secondary Ion Mass Spectrometry (SIMS) analysis. The strain in the Si:C substrate and NiSi:C film was studied by high resolution XRD (HRXRD). This paper demonstrates that Ni-silicide is compatible with Si:C. The tensile strain in Si:C is maintained after Ni-silicidation. The addition of carbon to silicon is found to stabilize the silicide morphology. 

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

New CoSi2 Silicidation Process for Sub-0.25 µm MOS Technologies - 01 March 1999

Gate spacer engineering for improved boron dose retention - 01 August 2005

Selective epitaxy removes roadblocks in the quest for speed - 01 March 2004

SOI opens enhanced opportunities - 01 March 2004

New Product: Low temp CVD offered for nickel silicide contacts by TEL - 04 October 2006

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: