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SPM techniques for carrier profiling at advanced technology nodes
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Vito Raineri, Filippo Giannazzo, CNR-IMM, Catania, Italy, & Raffaele Mucciato, 2M Strumenti, Roma, Italy
ABSTRACT
Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM) are two complementary Scanning Probe Microscopy (SPM) methods for two-dimensional carrier profiling with the ability to give useful information on carrier distributions in real deep submicron devices. These techniques can determine carrier profiles on different semiconductors and in particular SCM can provide carrier concentration as a direct measure. When the drift mobility is known, SSRM is able to provide 2D distributions for carrier concentration with a high resolution at concentrations higher than SCM. The main limitation for their rapid and general diffusion in semiconductor industry has been the time-consuming sample preparation stage that engages skilled technicians in boring procedures. Automatic sample preparation tools that are appearing on the market will enable this challenge to be met.
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