Online information source for semiconductor professionals

Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157nm

01 September 2002 | By Mark Osborne | White Papers > Edition 17, Lithography

Popular articles

Voltaix names Peter Smith as CEO - 09 November 2011

Sematech Litho Forum: Sematech mulling multi-beam mask writer effort - 12 May 2010

TSMC hosts 2008 Green Forum on ‘green’ factories - 31 October 2008

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

J. N. Hilfiker, J.A.Woollam Co., Inc. Lincoln, NE, USA. F. G. Celii,W. D. Kim, E. A. Joseph, C. Gross, T. Y. Tsui, R. B.Willecke & J. L. Large, Texas Instruments, Dallas, TX, USA. D. A. Miller, International SEMATECH, Austin, TX, USA

ABSTRACT

New SE tools measuring into the vacuum ultraviolet (VUV) allow accurate thin film metrology at 193 and 157nm. This article reviews characterization of photoresist, anti-reflection, and hardmask candidate coatings using SE. Optical characterization of these layers allows simulation and optimization of the lithography process.

Download Please login to download the paper. No account yet? Please register. It's free!

Related jobs

No related jobs found, sorry!

Related articles

New Product: MM-16 from HORIBA Jobin Yvon collects full spectral ellipsometric data - 24 November 2006

Characterization of Process Emissions Using FTIR Technology – A Case Study: Emissions and… - 01 December 1999

Measurement of Advanced Low K Materials - 01 March 1999

Measurement of Advanced Low K Materials - 01 March 1999

advanced characterization for copper interconnect technology - 01 December 2005

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: