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Simulation for DUV-Lithography

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WOLFGANG HENKE, Fraunhofer Institut Siliziumtechnologie, Itsehoe, Germany

ABSTRACT

Deep-UV (DUV) lithography using 248 and 193 nm exposure wavelength will be the microlithography technology of choice for the manufacture of advanced memory and logic semiconductor devices for the next years. For many companies DUV-lithography with 248 nm sources is becoming mainstream technology. To support introduction of this technology into wafer fabs and to ramp up or improve production yield, the use of simulation tools is a valuable means. Although concepts are, in principle, similar to traditional i-line or g-line lithography, exposure technology and imaging mechanisms of DUV resists are substantially different. The payoff from introducing DUV lithography will be the ability to manufacture devices using optical lithography for device generations having minimum dimensions of 0.12 μm or even below. This article will review some of the key issues to be tackled when applying simulation tools in current technology development. Issues concerning influence of the stepper or scanner lens, resist materials and resolution enhancement are discussed.
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