Online information source for semiconductor professionals

Simulation for DUV-Lithography

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

WOLFGANG HENKE, Fraunhofer Institut Siliziumtechnologie, Itsehoe, Germany


Deep-UV (DUV) lithography using 248 and 193 nm exposure wavelength will be the microlithography technology of choice for the manufacture of advanced memory and logic semiconductor devices for the next years. For many companies DUV-lithography with 248 nm sources is becoming mainstream technology. To support introduction of this technology into wafer fabs and to ramp up or improve production yield, the use of simulation tools is a valuable means. Although concepts are, in principle, similar to traditional i-line or g-line lithography, exposure technology and imaging mechanisms of DUV resists are substantially different. The payoff from introducing DUV lithography will be the ability to manufacture devices using optical lithography for device generations having minimum dimensions of 0.12 μm or even below. This article will review some of the key issues to be tackled when applying simulation tools in current technology development. Issues concerning influence of the stepper or scanner lens, resist materials and resolution enhancement are discussed.
Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Mask Error Factor and Critical Dimension Budgets for Sub-Half Micron CMOS Processes - 01 March 2000

SUSS MicroTec and GenISys team on mask aligner optimization - 21 February 2012

New Product: Brion accelerates Tachyon DFM capabilities for sub 45nm designs - 26 February 2007

Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157nm - 01 September 2002

New Product: Brion‚??s new Tachyon M3D accounts for 3D imaging effects on photomasks - 22 September 2006

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: