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Sidewall metrology technologies for 32nm node and beyond

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Johann Foucher, CEA/LETI-MINATEC, France

ABSTRACT

As devices’ dimensions and architectures move towards the 32nm node, CD metrology needs for both production process monitoring and process development must cope with new challenges affected by unknown new materials, architectures and processes. One of the main challenges for advance node requirement is the accuracy in CD metrology, which becomes mandatory not only at the R&D level but also at the manufacturing level. For advance processes, the control of profile shape is increasingly critical, and subsequently the improvement of sidewall angle (SWA) is necessary. In this article we will give an overview of the existing techniques which are supposed to become potential candidates to answer the “32nm node and beyond” roadmap requirements in term of SWA measurement.
 

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