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SATOSHI KAWAMOTO & FUMITOMO KAWAHARA, ADMAP Inc., Tamano, Okayama, Japan
TROY COLLARD, Mitsui Zosen USA Inc., San Mateo, CA,USA

ABSTRACT

Silicon carbide is already an indispensable material for current semiconductor manufacturing. We manufacture silicon carbide coated products and "free-standing" products using a CVD method. Silicon carbide has some amazing features: high oxidation resistance, high corrosion resistance and low diffusion coefficient against many elements, etc. In addition, "free-standing" products have more advanced characteristics. We can manufacture thin and complicated shapes made completely of silicon carbide without any substrate, and it is very useful for several processes. Especially, silicon carbide dummy wafers can be used for a much longer period than silicon dummy wafers for Lp- CVD processes like doped poly-Si and SiN deposition processes without maintenance. We conclude that the semiconductor manufacturing process will be improved and achieve significant cost reduction and a clean environment in each process by using silicon carbide.