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Shallow probe metrology

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Mona P. Moret, Chrystel Hombourger, Francois Desse, Rabah Bengbalagh, Valerie Paret & Michel Schuhmacher, CAMECA, France

ABSTRACT 

 

New materials and processes are steadily introduced in semiconductor technology to solve some new challenged of device performance. In the future, some choices will follow the ITRS nodes directives while others will be manufacturer- and/or product-dependent. These different varied orientations make the situation more and more complex for metrology tools. They need to be versatile enough to adapt relatively quickly to new varied material selections and be able to efficiently support the process engineers in the tough ramping-up phases as well as to endure continuous yield improvement. In the metrology domains of monitoring elemental composition and thickness in layers/multilayers and dopant dosimentry, CAMECA developed an original solution based on the LEXES technique.

 

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