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R. SINGH, V. PARIHAR, K. F. POOLE, Clemson University, Clemson, SC, USA
K. RAJKANAN, KLA - Tencor Corporation, Miltipas, CA, USA

ABSTRACT

Continued reduction of feature size, significant improvement in the functionality of new semiconductor products and simultaneously maintaining the historical rate of cost reduction of new products a re the three most important challenges faced by the semiconductor industry in the 21st century. From a p rocess integration point of view, the introduction of new materials (e.g. copper as conductor, as well as high and low k dielectrics) will be the most difficult challenge for semiconductor manufacturing in the 21st century. In a paradigm shift, understanding the role of defects and how they affect yield will be as important as the introduction of SPC was in leading to increased yield, some years ago. The ability to detect the important yield reducing defects in a particular step will be vital. In this paper, we have focused on the major issues related to process integration (e.g. introduction of new materials, new processes, new tools, etc.), new understanding of defects that can lead to the development of sub 100 nm silicon ICs. In this paper, we have provided an overview of the main issues related to process integration, defects, and lithography.