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PVD Copper Barrier/Seed Processes: Some Considerations for the 0.15 µm Generation and Beyond
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ABSTRACT
The transition from aluminium to copper interconnect technology is a key element of the current revolution in back-end of the line (BEOL) technology. Considerations related to the implementation of PVD Cu barrier/seed processes are an integral part of this transition process. Development of manufacturable, cost-effective, and extendable PVD barrier/seed processes requires that integration with attendant BEOL processes be built-in from the start. This paper presents some general issues that should be considered in developing PVD Cu barrier/seed processes that will be compatible with the requirements of the 0.15 μm generation and beyond.
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