Online information source for semiconductor professionals
PVD Copper Barrier/Seed Processes: Some Considerations for the 0.15 µm Generation and Beyond
Popular articles
Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008
Samsung and Micron gain most market share in DRAM crisis - 17 February 2009
TSMC hosts 2008 Green Forum on ‘green’ factories - 31 October 2008
Micron moving fast on Hynix in Q208 NAND flash rankings, says iSuppli - 19 August 2008
Numonyx to close California Technology Center - 12 August 2008
ABSTRACT
The transition from aluminium to copper interconnect technology is a key element of the current revolution in back-end of the line (BEOL) technology. Considerations related to the implementation of PVD Cu barrier/seed processes are an integral part of this transition process. Development of manufacturable, cost-effective, and extendable PVD barrier/seed processes requires that integration with attendant BEOL processes be built-in from the start. This paper presents some general issues that should be considered in developing PVD Cu barrier/seed processes that will be compatible with the requirements of the 0.15 μm generation and beyond.
 |
Please login to download the paper. No account yet? Please register. It's free! |