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Progress in understanding and reducing immersion related defectivity and resist leaching
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Monique Ercken, Mireille Maenhoudt & Mieke Van Bavel*, IMEC, Leuven, Belgium *Scientific editor
ABSTRACT
Lithography experts, IC manufacturers, tool and material suppliers are moving full speed ahead to bring immersion lithography into production for the 45nm
technology node. However, both resist leaching and immersion related defectivity remain a source of concern. For the latter, a fundamental understanding of the
sources and mechanisms involving defect formation is highly demanded. Recently, great progress has been achieved in the understanding and mitigation of both
scanner- and material-related immersion defectivities. In addition, resist leaching has been characterized in more detail and the pro and cons of using a top coat to
mitigate leaching have been evaluated. The challenges in these areas that remain to be solved before bringing immersion into mass production have been identified.
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