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Post-etch residue and photoresist removal challenges for the 45 nm technology node and beyond

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Paul W. Mertens, Guy Vereecke & Rita Vos, IMEC, Leuven, Belgium


Removal of photoresist (PR) and residues is becoming very critical in future generations of devices. In front-end-of-line (FEOL) post ion implantation (source/drain, extensions, halos, deep wells) the use of PR to block off parts of the circuit results in PR which is substantially hardenend and difficult to remove. In backend-of-line (BEOL) etching, the selectivity to removing resist and residues without removing low-k materials is very challenging. An overview of the status, issues and some novel approaches is presented.

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