Online information source for semiconductor professionals
Post-etch cleaning chemistries evaluation for low k-copper integration
Popular articles
Micron moving fast on Hynix in Q208 NAND flash rankings, says iSuppli - 19 August 2008
Numonyx to close California Technology Center - 12 August 2008
Qimonda starts major reorganization: exits PC DRAM market - 13 October 2008
Micron close to Inotera share purchase, says Gartner - 06 October 2008
Applied Materials sees higher CapEx spending for 2009 - 15 August 2008
L. Broussous, O. Hinsinger, S. Favier, P. Besson, STMicroelectronics, France
ABSTRACT
This work presents an analysis of interconnect cleaning for low-k / copper integration. We focused on post-etch cleaning for 0.12 and 0.09μm node technology with Fluoride Silicon Glass (FSG) and SiOC low-k dielectrics. Electrical and analytical data were combined to point out the mechanisms and efficiency of various cleaning chemistries in the presence of Copper.
 |
Please login to download the paper. No account yet? Please register. It's free! |