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Post-CMP Cleaning of Thermal-Oxide Wafers
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ABSTRACT
Post-CMP cleaning of polished thermal-oxide wafers was conducted using megasonic and brush cleaning techniques. The wafers were polished using a Rodel silica-based slurry. The results achieved by the two different cleaning methods are presented and compared. The results show that although the two techniques produce comparable cleaning performance, non-contact cleaning using SC1 chemistry produces lower defect counts on the cleaned wafers.
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