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Patterning of low k dielectrics: Prevention of 248 and 193 nm resist poisoning
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S. Satyanarayana, K. BrennanA, T. JacobsB, R. Berger International SEMATECH, Austin TX ATexas Instruments Assignee, BPhilips Assignee
ABSTRACT
This article presents general guidelines for preventing resistpoisoning during patterning of low k dielectrics.[1] The patterning approaches discussed here are 248nm and 193nm lithography. The low k materials considered here include both CVD and spin-on types, which are the two major categories of low k materials being considered by IC manufacturers. Early work was based on the assumption that poisoning was caused by interaction of the resist with the out-gassing products of the low k films [2]. Here it is shown that a more comprehensive study of the interactions of the resist with the process chemicals and the materials in the film stack is required to fully understand the poisoning problem.
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