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Optimizing the selection and supply of hf precursor candidates for gate oxide
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A. Soulet, L. Duquesne, G. Jursich & R. Inman, American Air Liquide, Chicago research Center, IL, USA,
A. Misra, Air Liquide Electronics U.S. LP, Dallas, TX, USA, N. Blasco, C. Lachaud, Y. Marot, R. Prunier &
M. Vautier, Air Liquide Centre de Recherches Claude Delorme, Jouy-en-Josas, France, & S. Anderson,
P. Clancy & M. Havlicek, Air Liquide – Balazs™ Analytical Services, CA, USA
ABSTRACT
Selecting a precursor for gate oxide deposition requires extensive characterization of targeted molecules. Critical analytical parameters for MOCVD and ALD precursors, like vapor pressure, thermal stability, and metallic contamination are presented and results discussed herein for the most promising Hf precursors currently under investigation: tetrakis(ethylmethylamino)hafnium (TEMAH), tetrakis(dimethylamino)hafnium (TDMAH), tetrakis(diethylaminohafnium) (TDEAH), tetrakis(tertbutoxy)hafnium (HTB) and hafnium tetrachloride(HfCl4). In this article, we show how these characterizations help in preventing precursors degradation, identifying gas-phase species and defining process windows and distribution parameters.
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