Online information source for semiconductor professionals

Optimizing the selection and supply of hf precursor candidates for gate oxide

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

A. Soulet, L. Duquesne, G. Jursich & R. Inman, American Air Liquide, Chicago research Center, IL, USA,
A. Misra, Air Liquide Electronics U.S. LP, Dallas, TX, USA, N. Blasco, C. Lachaud, Y. Marot, R. Prunier &
M. Vautier, Air Liquide Centre de Recherches Claude Delorme, Jouy-en-Josas, France, & S. Anderson,
P. Clancy & M. Havlicek, Air Liquide – Balazs™ Analytical Services, CA, USA


Selecting a precursor for gate oxide deposition requires extensive characterization of targeted molecules. Critical analytical parameters for MOCVD and ALD precursors, like vapor pressure, thermal stability, and metallic contamination are presented and results discussed herein for the most promising Hf precursors currently under investigation: tetrakis(ethylmethylamino)hafnium (TEMAH), tetrakis(dimethylamino)hafnium (TDMAH), tetrakis(diethylaminohafnium) (TDEAH), tetrakis(tertbutoxy)hafnium (HTB) and hafnium tetrachloride(HfCl4). In this article, we show how these characterizations help in preventing precursors degradation, identifying gas-phase species and defining process windows and distribution parameters.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Extending silicon oxynitride gate dielectrics for the 90nm node - 01 September 2002

Front-End Trends, Challenges, and Potential Solutions for the 180 ‚?? 100 nm IC Technology Generatio - 01 December 1999

CMOS integration results for the 90nm technology node - 01 March 2003

Scaling plasma-nitrided gate dielectrics to the 65-nm node - 01 September 2003

ASM offers single metal gate stack for 32nm logic processes - 19 May 2008

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: