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MOCVD Processed Ceramic Thin Film Layers for Future Memory Applications
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AIXTRON AG, Aachen, Germany
ABSTRACT
MOCVD processing of new materials such as perovskite type ceramic thin films will be one of the major key technologies for a new semiconductor device architecture in the field of ULSI non-volatile and volatile memory applications. This article outlines general trends and challenges in the field of MOCVD equipment and process development, driven not only by material performance aspects but especially by new integrated device applications like smart IC- and contactless RF-ID cards.
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