Online information source for semiconductor professionals

Metrology challenges for the photolithography masks

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

M. Dilger, F. Gans & J.H. Peters, Advanced Mask Technology Center GmbH & Co. KG, Dresden, Germany

ABSTRACT

Metrology is not only used to measure the size of structures on photolithography masks for a verification of conformance with the customer specifications. A major part of the metrology tool time is usually devoted to process development and pattern structures deviating from the ideal shapes need to be analysed for process tuning. Current tools usually treat the mask as a 2-dimensional object, which for the future technologies is no longer a valid concept. Furthermore, in some cases there is a strong interference between the object to be measured and the measurement technique itself. AMTC is working on concepts and measuring methods to accelerate the process development.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Litho metrology challenges for the 45nm technology node and beyond - 01 March 2006

Vistec Semiconductor highlights EUV mask registration metrology results - 12 March 2008

Metrology Issues in the Age of Next Generation Lithography - 01 March 1999

Broadband spectrophotometry for phase-shift-mask metrology - 01 March 2004

Novel electron-beam-based photo-mask-repair technology - 01 March 2004

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: