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STEPHEN ST. ONGE & MARK DUPUIS, IBM Microelectronics Division, Essex Jct, VT, USA#

ABSTRACT

Aretrospective look at the many years of development and production of silicon germanium (SiGe) processing reveals significant challenges that have been overcome to make this the mature technology it is today. Development of the SiGe EPI process was the fundamental achievement that made this technology possible. Optimising the interaction of this EPI layer with its surroundings has enabled the achievement of high bipolar device yield. Integrating this high performance SiGe HBT with dense CMOS logic and a complement of passive devices creates technologies which are well suited for a broad range of products. Using a modular integration approach enables quick migration to next generation and derivative technologies.