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In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapour d

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H. De Witte & J.W.H. Maes, ASM International, Bilthoven, The Netherlands, S. Passefort, KLA-Tencor Corporation, Evry, France,W. Besling, Philips Research, Eindhoven, The Netherlands, K. Eason, KLA-Tencor Corporation, San Jose, CA, USA, E. Young, International SEMATECH, Austin, TX, USA, Z.M.Rittersma, Philips Research Leuven, Kapeldreef 75, 3001 Leuven, Belgium, M. Heyns, IMEC, Leuven, Belgium

ABSTRACT

For the evaluation and characterization of Atomic Layer Chemical Vapour Deposition ALCVD™ high k dielectrics we have used a KLA-Tencor, Quantox in-line electrical metrology tool. We have investigated and found that the Quantox tool can be used as a fast and much less expensive evaluation tool for optimization of ALCVD process conditions and process stability monitoring. Equivalent Oxide Thickness (EOT) obtained from Quantox agrees very well with High Frequency Capacitance- Voltage, C-V, results 

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