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Implant Anneal Using Single Wafer Rapid Thermal Furnace (SRTF) and Lamp-Based RTP System
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WOO SIK YOO & TAKASHI FUKADA, WaferMasters Inc, San Jose, CA, USA
RIU KOMATUBARA, Tokyo Electron Ltd, Tokyo, Japan
JIRO YAMAMOTO, NEC Hiroshima Ltd, Hiroshima, Japan
ABSTRACT
Rapid thermal annealing (RTA) of various implant species (11B+, 49BF2+, 31P+ and 75As+) in 200mm diameter Si wafers was done using a single wafer furnace (SRTF) system and a lamp-based rapid thermal processing (RTP) system under 1 atm N2 atmosphere. Implant energy was varied between 70keV and 50keV. Average sheet resistance and its uniformity were measured after annealing under various conditions. Very efficient and uniform electrical activation across the wafer was observed in a wide range of annealing conditions. An alternative implant annealing strategy against the “spike anneal” was proposed based on experimental results.
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