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IBM‚??s SiGe BiCMOS technology roadmap

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D.L. Harame, J.S. Dunn, A. Joseph, S.A. St. Onge, D. Coolbaugh, V. Ramachandran, J. Johnson, P. Cottrel, R. Singh, C. Dickey, IBM, Essex Junction, Vermont,USA, G. Freeman, D. Ahlgren, D. Greenberg, J.-S. Rieh, B. Jagannathan, S.Subbanna,IBM, Hopewell Junction, NY, USA, M. Meghali, IBM Yorktown Hts., NY, USA, O. Schreiber,MCC, San Diego, CA, USA, & T. Tanji, AMCC, Edina, MN, USA


This article reviews the evolution of IBM’s SiGe BiCMOS technology roadmap. It begins with a discussion of the wireline communications products that drive the initial high-performance target of the roadmap: the latest advanced CMOS and highest performance (high fT and fMAX) HBT. These requirements establish the CMOS integration approach and drive the initial SiGe HBT design. Subsequent wireless and storage demands are focused on traditional radio requirements: Optimization of the HBT for low noise, low distortion and higher breakdown voltages. These product segments further drive the derivative technologies to more simplified states for lower cost and faster TAT. Taking this perspective on the evolution of the SiGe BiCMOS reveals that the roadmap for the this technology has been developedto serve dissimilar markets with a flexible technology backbone that provides a path to reduce cost and time to market. 

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