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High-k/metal gate transistor scaling and device concerns for advanced CMOS device applications

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Mark I. Gardnera, Sundar Gopalan, Jim Gutt, Paul Kirschb, Siddarth Kirshnan, Jeff Petersonc, Hong-Jyh Lid & Howard R. Huff, International SEMATECH, Austin, Texas, USA Assignment from: a Advanced Micro Devices, b IBM, c Intel d Infineon


This article discusses the issues surrounding high-k metal gate transistors for advanced CMOS devices. This type of structure is essential to obtain future generations of devices.

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