Mark I. Gardnera, Sundar Gopalan, Jim Gutt, Paul Kirschb, Siddarth Kirshnan, Jeff Petersonc, Hong-Jyh Lid & Howard R. Huff, International SEMATECH, Austin, Texas, USA Assignment from: a Advanced Micro Devices, b IBM, c Intel d Infineon
ABSTRACT
This article discusses the issues surrounding high-k metal gate transistors for advanced CMOS devices. This type of structure is essential to obtain future generations of devices.