Online information source for semiconductor professionals

Further optimization of plasma nitridation of ultra-thin oxides for 65-nm node MOSFETS

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

P.A. Kraus, T.C. Chua, K. Z. Ahmed, J. Campbell, F. Nouri & J. Cruse, Applied Materials, Sunnyvale, CA, USA, A. Rothschild, A. Veloso, S. Mertens & M. Schaekers, IMEC, Leuven, Belgium, F.N. Cubaynes, Philips Research Leuven, Leuven, Belgium, L. Date & R. Schreutelkamp, Applied Materials Belgium, Leuven, Belgium & T. M. Bauer, Sandia National Laboratories, Albuquerque, NM, USA


Optimization of MOSFET gate dielectric nitridation is performed via N2 plasma characterization. The energy scales of the electrons and ions are measured in inductively coupled pulsed radio frequency nitrogen plasmas. Controlling both the instantaneous and timeaveraged energy scales of the electrons and ions is found to be possible through modifications to the pulsed-rf plasma apparatus. These modifications result in up to a 15% and 7% improvement in nMOS and pMOS low-field mobility, respectively, at fixed gate leakage current when compared to results with the standard apparatus. The results indicate a means to extend silicon oxynitride as a useful gate dielectric for the 65-nm node.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Scaling plasma-nitrided gate dielectrics to the 65-nm node - 01 September 2003

Extending silicon oxynitride gate dielectrics for the 90nm node - 01 September 2002

New Product: Tokyo Electron lowers CO2 emissions of its ‘Trias SPAi’ plasma treatment system - 05 December 2008

ASM pushes porous low-k for 65nm - 04 February 2005

IMEC to tackle flash memory scaling with RRAM focus - 15 October 2008

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: