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Full-Wafer Endpoint Detection Improves Process Control in Copper CMP
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BRET W. ADAMS, BOGDAN SWEDEK, RAJEEV BAJAJ, FRITZ REDEKER, MANUSH BIRANG & GREGORY AMICO,
Applied Materials, Inc., Santa Clara, CA, USA
ABSTRACT
To achieve the benefits of using copper, users must minimise and control dishing and erosion across the wafer during the Cu CMP process. A new development in endpoint detection dramatically increases the detection sensitivity to when copper first clears by scanning across the full wafer diameter. This can be combined with a two-step polishing process to minimise dishing and erosion. Results of experiments using this system are described.
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