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LIAM CUNNANE, KNUT BEEKMANN, SIMON MCCLATCHIE & ADRIAN KIERMASZ, Trikon Technologies Ltd, Newport, Gwent, UK
ABSTRACT
The approach to the integration of low-k materials studied in this article is to use an inorganic material such as silicon dioxide doped with organic components. Embedded and non-embedded integration schemes are described. Electrical data shows that the low-k material performs as well as or better than a standard oxide.
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