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Evaluation of Brush Post-CMP Cleaning of Thermal Oxide Wafers Using Chelating Basic Chemistry

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SHIVA RAMACHANDRAN, Clarkson University, Potsdam, NY, USA
AHMED A. BUSNAINA, Northeastern University, Boston, MA, USA
ROBERT SMALL & CASS SHANG, EKC Technology, Hayward, CA, USA

ABSTRACT

In this article, an investigation of brush cleaning of post-CMP wafers using a chelating basic chemistry is presented. Silica slurry particles were deposited on the wafer surface by dipping. The effect of brush speed, pressure and cleaning time on cleaning is described. The cleaning efficiency was found to be near 100% over most of the range of parameters investigated.

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