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Electrochemical deposition challenges for 65nm

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Frank Rabourn, Semitool Inc., Kalispell, Montana, USA


The semiconductor industry’s movement to the 65nm technology node, presents a number of challenges for Interconnect. Many of these are extensions of the current challenges for the 90nm node, such as low-k integration, CMP uniformity, Residue Removal and structural robustness. These challenges have become greater when coupled with the 65nm requirements. Newer challenges are directly related to the scaling requirements for 65nm, such as current density, ultrathin barrier/seed deposition and electromigration (EM). This paper is focused on the challenges related to the Electrochemical Deposition (ECD) for the 65nm technology node.

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