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Effective Contact Post-CMP Cleaning

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PROF. A. A. BUSNAINA, DR. N. MOUMEN, M. GUARRERA & J. PIBOONTUM, Clarkson University, Potsdam, NY, USA

ABSTRACT
Particulate contamination of Si wafers after the chemical mechanical polishing (CMP) process is a serious problem that affects yield in semiconductor manufacturing. The particles and other contaminants come from various sources in the polishing process. Contact (brush) cleaning is the most common post-CMP cleaning technique used today. The effect of the brush cleaning parameters is investigated. The effect of brush pre s s u re, rotation speed and cleaning time on the removal efficiency is presented . Complete removal using the brush scrubber with DI water is achieved using wafers dipped in STI silica slurry. Intermediate brush pressure, speed and time gave the most overall particle removal efficiency.
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