Online information source for semiconductor professionals

Dry Etching of High-k Materials for Future Memory Applications

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

STEFAN SCHNEIDER, Forschungszentrum Jülich, Jülich, Germany

ABSTRACT

New materials for advanced memories device structures in multi-Gbit DRAMs and FeRAMs are entering production. Managing the diversity of new materials being introduced into the fab is a key technology. This article covers the challenges for process and tool development to be handled in dry etching of high-k materials.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Plasma‚??surface interactions in patterning high-k dielectric materials - 01 June 2004

New Product: New mask etcher from Applied Materials enables aggressive OPC techniques - 19 April 2007

New Product: Line edge roughness reduction at 45nm on Applied‚??s Producer APF-e system - 15 September 2006

Post-etch residue and photoresist removal challenges for the 45 nm technology node and beyond - 01 September 2006

RRAM technology start-up joins SEMATECH‚??s next-gen memory program - 12 April 2011

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: