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Dry Etching of High-k Materials for Future Memory Applications

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STEFAN SCHNEIDER, Forschungszentrum Jülich, Jülich, Germany


New materials for advanced memories device structures in multi-Gbit DRAMs and FeRAMs are entering production. Managing the diversity of new materials being introduced into the fab is a key technology. This article covers the challenges for process and tool development to be handled in dry etching of high-k materials.

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