Online information source for semiconductor professionals
Dry Etching of High-k Materials for Future Memory Applications
Popular articles
Micron moving fast on Hynix in Q208 NAND flash rankings, says iSuppli - 19 August 2008
Numonyx to close California Technology Center - 12 August 2008
Qimonda starts major reorganization: exits PC DRAM market - 13 October 2008
Applied Materials sees higher CapEx spending for 2009 - 15 August 2008
Micron close to Inotera share purchase, says Gartner - 06 October 2008
STEFAN SCHNEIDER, Forschungszentrum Jülich, Jülich, Germany
ABSTRACT
New materials for advanced memories device structures in multi-Gbit DRAMs and FeRAMs are entering production. Managing the diversity of new materials being introduced into the fab is a key technology. This article covers the challenges for process and tool development to be handled in dry etching of high-k materials.
 |
Please login to download the paper. No account yet? Please register. It's free! |