Online information source for semiconductor professionals

Design, testing, and manufacture of fast-switching valves for high-productivity ALD

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

By William Glime, Swagelok Company, Ohio, and Tom Seidel, Genus, Inc., California

ABSTRACT

High-productivity Atomic Layer Deposition (ALD) processes are being driven by semiconductor applications (e.g., capacitor, gate and interconnects) requiring ultra-thin films or conformal coatings with precise thickness control. ALD is particularly effective on surfaces with high aspect ratios or where graded compositions (i.e., where one layer consists of one material and the next layer of another) are required.  Future memory devices referenced in the International Technology Roadmap for Semiconductors (ITRS) - such as Magnetic RAM (MRAM) and Phase Change Memories, Nanofloating Gates, Single-Electron and Molecular Memories - may initially employ topologies with relatively relaxed aspect ratios, as compared to today’s DRAM devices. However, they all require ultra-thin films, and eventually, they will all migrate toward moderate, if not extreme, aspect ratios. The ITRS projects that DRAM capacitor deep trenches made circa 2010 will require step coverage on high aspect ratios approaching 100:1 at 45nm sizes. The active area would be 20× the planar silicon. The challenge to provide conformal coating on such high-density structures will depend on significant advances over conventional ALD, including advances in ALD chemical precursors, delivery systems, and operating systems.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

SEMI¬ģ F57-0301 and beyond: Advancing standards for ultra high-purity fluoropolymer components - 01 August 2005

Modular Gas Systems provide Versatility, Serviceability, and Ease of Assembly - 01 March 2002

IMEC demonstrates GaN-on-Si architecture at IEDM - 08 December 2009

Power hungry FPGAs get fix at 90nm - 04 February 2005

Tuned Reticle Enhancements Optimized for Process Response - 01 April 2007

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: