Online information source for semiconductor professionals

Challenges of Electroplated Copper Film and Device Characteristics for Copper Slurry Design

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

MARIA L. PETERSON, ROBERT J. SMALL, TUAN TRUONG & JOO-YUN LEE, EKC Technology, Inc., Hayward, CA, USA

ABSTRACT

Planarizing copper deposited inlays is not a simple problem to solve. The change in crystallite orientation within the infill affects the polishing uniformity and processing wafers from different sources can add to the problems. The various pitfalls are discussed and polishing techniques explained. By using two stage polishing processes with careful control of the slurry chemistry and abrasive particle geometry, excellent surface flatness has been obtained.
Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Management of Copper CMP effluents - 01 December 2004

Copper CMP treatment using the Copper Select‚?Ę process - 01 March 2005

Control of Damascene Copper Processes by Cyclic Voltammetric stripping - 01 June 2000

Measurement of Metal Film Thickness for Copper Interconnects - 01 December 2002

A Breakthrough in Low-k Barrier/Etch Stop Films for Copper Damascene Applications - 01 March 2000

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: