Online information source for semiconductor professionals

Challenges in Copper Interconnect Technology: Macro-Uniformity and Micro-Filling Power in Copper…

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

YEZDI DORDI & PETER HEY, Applied Materials, Inc., Santa Clara, CA, USA


Copper electroplating has become the accepted process for depositing copper on semiconductor wafers. Achieving reliable via and trench filling is the principal challenge of the electroplating process, and this gap filling process is controlled by the kinetics of the copper plating reaction, which in turn is partially governed by the nature and concentration of trace amounts of organic additives in the electrolyte. Since additive concentrations are in the parts-per-million (ppm) range and are continuously depleted during the plating process as well as during system idle time, maintaining the correct electroplating bath composition is critical to achieving consistent void-free filling
Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Automated Chemical Management for Production Copper Electroplating - 01 March 2000

Taking control of the copper process at 65 nmTaking control of the copper process at 65 nm - 01 December 2003

Copper Metallization Technology for ULSI Chip Interconnects - 01 March 1999

Confronting the low-k challenge: if it does not improve RC, why bother? - 01 December 2003

Local Electrochemical Analysis (LEA) Applications for the Analysis of Copper Films used in Damascene - 01 March 2002

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: