Online information source for semiconductor professionals
Broadband spectrophotometry for phase-shift-mask metrology
Popular articles
Micron moving fast on Hynix in Q208 NAND flash rankings, says iSuppli - 19 August 2008
Numonyx to close California Technology Center - 12 August 2008
Qimonda starts major reorganization: exits PC DRAM market - 13 October 2008
Micron close to Inotera share purchase, says Gartner - 06 October 2008
Applied Materials sees higher CapEx spending for 2009 - 15 August 2008
Phillip Walsh, George Li & A. Rahim Forouhi, n&k Technology, Inc
ABSTRACT
We present a method based on broadband spectrophotometry in conjunction with Forouhi–Bloomer dispersion equations and hybridrigorous coupled wave analysis (RCWA) for monitoring film thickness, film optical properties, trench parameters, and phase shift in phase-shift masks. The method, known as the n&k method, has certain advantages over conventional metrology in terms of throughput and suitability for integration into the mask creation process. At the same time, the n&k method has demonstrated excellent correlation with conventional metrology methods.
 |
Please login to download the paper. No account yet? Please register. It's free! |