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An Evaluation of C3F8 as Chamber Cleaning Gas Alternative in HDP-CVD Tools
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ROBERTA PIVA, FABIO SOMBOLI & ANDREA ZAMBONI, STMicroelectronics, Agrate, Italy
RODOLFO GUGLIELMETTI, Applied Materials, Caponago, Italy
ABSTRACT
C3F8 cleaning gas has been studied as an alternative chemistry candidate for chamber cleaning on Applied Materials HDP-CVD systems. The hardware configuration and process set-up are reported. The results obtained on five different HDP-CVD chambers used for semiconductor production in a medium term period (3 months) are also reported. The outlined hardware setup has been designed to allow easy switching between cleaning chemistries. Process performances, especially in terms of particles contamination, did not show differences, but the wafers throughput is lower with respect to NF3 standard cleaning. Moreover, C3F8 cleaning can contribute to PFC emissions.
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