Online information source for semiconductor professionals

Eric Eisenbraun, College of Nanoscale Science and Engineering (CNSE), The University of Albany, New York, USA

ABSTRACT

Atomic layer deposition (ALD) has received increasing attention over recent years owing to its unique aspects of thickness and compositional controllability at the nanoscale. As critical layers in leading-edge devices scale to the nanometer regime, ALD is becoming recognized as not only an enabling technology, but also as  the only viable technology for applications such as the gate dielectric and copper carrier/seed layers at and beyond the 32nm product generations. With the capabilities of this nanoprocessing technique having finally intersected with the technological demands of the marketplace, ALD is establishing additional inroads to the manufacturing floor, as well as other applications outside of mainstream semiconductor processing.