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Advances in dual damascene copper deposition technologies
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Robert Preisser, Atotech Deutschland, Berlin, Germany
ABSTRACT
The introduction of copper metallization into semiconductor manufacturing has been a significant step in process technology and device scaling. However, the wet
electro-deposition technology used suffers from a number of drawbacks. Impurities deposited on the copper anode from organic additives in the electrolyte solution can subsequently be released and deposited on the wafer, leading to killer-defect particles. Also, gas bubbles from the electrolytic decomposition of water can be trapped in the deposited metal, leading to further process issues.
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