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Advancements in SiGe Epitaxy for Production Applications

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N.B. RILEY, DR. P.COMITA, LORI WASHINGTON, Applied Materials, Inc., Santa Clara, CA, USA

ABSTRACT

Aflexible epi deposition system has been developed which enables SiGe alloys of varying composition to be grown and is compatible with silicon p roduction epitaxy in the same apparatus without c ross contamination. The use of load locking and high vacuum integrity minimises gas and water vapour contamination and the use of high system gas flows t h roughout the epi process further reduces the contaminant levels to those orders achieved by U.H.V.
systems.

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