Online information source for semiconductor professionals

Advanced junction fabrication challenges at the 45nm node

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

D. Lenoble, STMicroelectronics


Based on calibrated-model simulations, this paper firstly highlights the significant impact of ultra-shallow junctions (USJ) in nano-scaled CMOS technologies. The specific requirements of USJs according to the transistor’s operating electrical targets are discussed and a dedicated figure of merit for USJs is proposed for assessing the applicability of published USJ formation processes. The integration issues are also presented from the point of view of circuit performance and manufacturability, including some economic analysis. Lastly, some perspectives on emerging doping processes are given and the main conclusions are summarized.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

Strain engineering push to the 32nm - 01 December 2006

Toppan Printing to develop photomask technology with IBM at 14nm node using immersion lithography - 17 January 2011

Electrochemical deposition challenges for 65nm - 01 March 2003

Order Focus: Levitech sells RTP system to European foundry - 13 January 2011

Copper deposition: challenges at 32nm - 01 March 2006

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: