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J.W. Epton, BOC Edwards, Crawley, UK

ABSTRACT

Numerous steps in the semiconductor manufacturing process require deposition of materials onto a substrate by utilisation of physical vapor deposition (PVD) or chemical vapor deposition (CVD) techniques. During these steps, the internal surfaces of the process chamber retain some of the deposits, resulting in particles that cause defects. Recent development in metal and dielectric chamber surface coatings have reduced the flaking of deposited materials, minimising particle counts and improving process performance.