Online information source for semiconductor professionals

Advanced CMP consumable design for defectivity control

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Halbert Tam, JSR Micro, Inc., Sunnyvale, CA, USA & Nobuo Kawahashi, JSR Corporation, Yokkaichi, Japan


For Cu/low-k integration at 65 nm or beyond, development on soft CMP polishing is essential to minimize the defectivity. While conventional approaches to defect reduction involve using lower polish pressures, lower polish speeds and slurry filtration to control particle-size distribution, more fundamental changes in CMP consumables may be necessary to provide solutions for the 65-nm node and beyond. To meet these more stringent defect requirements, JSR has developed a low-defectivity CMP process through engineering of a soft abrasive slurry and a polymer-based solid pad. This article will present this approach to defect reduction through design of CMP consumables. Data will be shown that, by design, the compressible nature of the abrasive and soft top layer of the solid pad enable low-defect polishing while maintaining high copper removal rates and planarization capability.

Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

New Product: Rohm and Haas‚?? groove designs for CMP pads reduces cost of consumables - 18 December 2008

Repealing Moore‚??s Law: Sub-0.25µm Linewidths Drive Metrology, Trajectory-Control Advancement - 01 June 2000

New Product: Ultra-thin SOI and ultra-thin BOX wafers from Soitec support sub-45 nm roadmap - 29 January 2009

Defect monitoring on memory devices using broadband brightfield inspection - 01 September 2007

Design and process limited yield at the 65-nm node and beyond - 01 December 2005

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: