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A Novel Oxazole Based Low k Dielectric Addresses Copper Damascene Needs
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G. SCHMID, R. SEZI, K. LOWACK, & W. RADLIK, Infineon Technologies, Munich, Germany
ABSTRACT
Anew polymer based low k interlayer dielectric (ILD) material has been developed for application in high performance integrated circuits. The spin-on polymer named OxD provides superior adhesion and processing stability combined with excellent planarisation and gap-fill properties. OxD is fully compatible with existing CMOS technologies including Cu damascene or Al metallisation schemes. Due to its mechanical strength, OxD can easily withstand chemical mechanical polishing in particular.
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