Online information source for semiconductor professionals
A Novel Dual-Damascene ETCH Process Utilising a High-Selectivity, Ultralow-k Dielectric
Popular articles
Voltaix names Peter Smith as CEO - 09 November 2011
Sematech Litho Forum: Sematech mulling multi-beam mask writer effort - 12 May 2010
TSMC hosts 2008 Green Forum on ‘green’ factories - 31 October 2008
Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008
TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008
ABSTRACT
This article describes a potential dual-damascene etch process for an ultralow-k dielectric consisting of a nanocomposite of polytetrafluoroethylene (PTFE) and siloxane. PTFE has a high etch selectivity relative to common process materials. Trials of an integration scheme using this type of dielectric are described.
 |
Please login to download the paper. No account yet? Please register. It's free! |