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A Novel Dual-Damascene ETCH Process Utilising a High-Selectivity, Ultralow-k Dielectric

01 March 2000 | By Mark Osborne | White Papers > Edition 11, Wafer Processing

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TOM ROSENMAYER, JOHN BARTZ, SHICHUN QU & PING XU, W. L. Gore & Associates, Inc., Eau Claire, WI, USA

ABSTRACT

This article describes a potential dual-damascene etch process for an ultralow-k dielectric consisting of a nanocomposite of polytetrafluoroethylene (PTFE) and siloxane. PTFE has a high etch selectivity relative to common process materials. Trials of an integration scheme using this type of dielectric are described.

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